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Fast Turn-Off Times 60 ns Inductive Fall Time - 25_C (Typ) 120 ns Inductive Crossover Time - 25_C (Typ) Operating Temperature Range -65 to + 200_C 100_C Performance Specified for: Reverse-Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Currents (125_C)
Designer's and SWITCHMODE are trademarks of Motorola, Inc. (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data The BUS98 and BUS98A transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line-operated switchmode applications such as: * * * * *
Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design.
SWITCHMODE Series NPN Silicon Power Transistors
Designer'sTM Data Sheet
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
REV 7 Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds Thermal Resistance, Junction to Case Operating and Storage Junction Temperature Range Total Power Dissipation -- TC = 25_C -- TC = 100_C Derate above 25_C Base Current -- Continuous -- Peak (1) Collector Current -- Continuous -- Peak (1) -- Overload Emitter Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage
Switching Regulators Inverters Solenoid and Relay Drivers Motor Controls Deflection Circuits
Characteristic
Rating
x10%.
VCEO(sus)
Symbol
Symbol
TJ, Tstg
VCEV
RJC
VEB
IC ICM IoI
IB IBM
PD
TL
BUS98
850
400
- 65 to + 200
Max
250 142 1.42
30 60 120
275
0.7
10 30
7
30 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS (BVCEO) 250 WATTS 850 - 1000 V (BVCES)
BUS98A
BUS98 BUS98A
1000
450
Order this document by BUS98/D
CASE 1-07 TO-204AA
Watts
W/_C
_C/W
Unit
Unit
Adc
Adc
Vdc
Vdc
Vdc
_C
_C
1
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BUS98 BUS98A
(1) Pulse Test: PW = 300 s, Duty Cycle Inductive Load, Clamped (Table 1) SWITCHING CHARACTERISTICS Restive Load (Table 1) DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) SECOND BREAKDOWN OFF CHARACTERISTICS (1)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Fall Time
Crossover Time
Storage Time
Fall Time
Storage Time
Fall Time
Storage Time
Rise Time
Delay Time
Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 100 kHz)
Base-Emitter Saturation Voltage (IC = 20 Adc, IB = 4 Adc) (IC = 20 Adc, IB = 4 Adc, TC = 100_C) (IC = 16 Adc, IB = 3.2 Adc) (IC = 16 Adc, IB = 3.2 Adc, TC = 100_C)
Collector-Emitter Saturation Voltage (IC = 20 Adc, IB = 4 Adc) (IC = 30 Adc, IB = 8 Adc) (IC = 20 Adc, IB = 4 Adc, TC = 100_C) (IC = 16 Adc, IB = 3.2 Adc) (IC = 24 Adc, IB = 5 Adc) (IC = 16 Adc, IB = 3.2 Adc, TC = 100_C)
DC Current Gain (IC = 20 Adc, VCE = 5 Vdc) (IC = 16 Adc, VCE = 5 V)
Clamped Inductive SOA with Base Reverse Biased
Second Breakdown Collector Current with Base Forward Biased
Emitter-Base Breakdown Voltage (IE = 100 mA - IC = 0)
Emitter Cutoff Current (VEB = 7 Vdc, IC = 0)
Collector Cutoff Current (VCE = Rated VCEV, RBE = 10 )
Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 125_C)
Collector-Emitter Sustaining Voltage (Table 1) (IC = 200 mA, IB = 0) L = 25 mH
2
IC(pk) = 20 A Ib1 = 4 A VBE(off) = 5 V, VCE(c1) = 250 V) IC(pk) = 16 A lB1 = 3.2 A) (VCC = 250 Vdc, IC = 20 A, IB1 = 4.0 A, tp = 30 s, Duty Cycle 2%, VBE(off) = 5 V) (for BUS98A: IC = 16 A, Ib1 = 3.2 A) Characteristic
v 2%. v
(BUS98A)
(BUS98)
BUS98A
BUS98A
BUS98
BUS98
BUS98 BUS98A
BUS98 BUS98A
TC = 25 _C TC = 125 _C
(TC = 100_C) _C)
(TC = 25_C)
VCEO(sus)
VCE(sat)
VBE(sat)
Symbol
RBSOA
Motorola Bipolar Power Transistor Device Data
VEBO IEBO ICER ICEV Cob hFE IS/b tsv tsv td tfi tfi tr tf tc ts Min 400 450 7.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 8 0.17 0.06 1.55 1.55 Typ 0.3 1.8 0.2 0.4 0.1 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- See Figure 13 See Figure 12 0.35 Max 700 0.6 2.8 0.4 2.3 0.7 0.2 1.6 1.6 1.6 1.6 1.5 3.5 2.0 1.5 5.0 2.0 0.2 1.0 6.0 0.4 4.0 -- -- -- -- -- -- mAdc mAdc mAdc Unit Vdc Vdc Vdc Vdc pF s s --
BUS98 BUS98A
DC CHARACTERISTICS
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 10 5 3 IC = 10 A 1 0.5 0.3 TC = 25C 0.1 0.1 0.3 0.5 1 IB, BASE CURRENT (AMPS) 2 3 4 IC = 15 A IC = 20 A
50 hFE, DC CURRENT GAIN 30 20 10 5 3 2
90%
10%
VCE = 5 V 3 5 7 10 20 IC, COLLECTOR CURRENT (AMPS) 30 50
Figure 1. DC Current Gain
Figure 2. Collector Saturation Region
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
f = 5 90% 10% 1 0.7
VBE, BASE EMITTER VOLTAGE (VOLTS)
f = 5 2 1 0.7 0.5 0.3 TJ = 25C TJ = 100C
0.3
0.1
1
3
10
20
0.1
0.3
1
3
10
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Voltage
104 VCE = 250 V IC, COLLECTOR CURRENT ( A) 103 TJ = 150C 102 125C 101 100 25C 10 -1 - 0.4 100C 75C REVERSE FORWARD C, CAPACITANCE (pF)
10k
Cib 1k
100 Cob TJ = 25C 10
- 0.2
0
0.2
0.4
0.6
1
10
100
1000
VBE, BASE-EMITTER VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Collector Cutoff Region
Figure 6. Capacitance
Motorola Bipolar Power Transistor Device Data
3
BUS98 BUS98A
Table 1. Test Conditions for Dynamic Performance
VCEO(sus) RBSOA AND INDUCTIVE SWITCHING RESISTIVE SWITCHING
- VC1 MJE200 +10 V 1 20 0 -10 V 2 BUV20 1 F ADJUST VC2 TO OBTAIN DESIRED IB2 50 F +10 V MJE210 BUV20 0.1 F 50 F ADJUST VC1 TO OBTAIN DESIRED IB1
TURN-ON TIME 1 2 IB1
INPUT CONDITIONS
IB1 adjusted to obtain the forced hFE desired TURN-OFF TIME Use inductive switching driver as the input to the resistive test circuit.
PW Varied to Attain IC = 100 mA
CIRCUIT VALUES
Lcoil = 25 mH, VCC = 10 V Rcoil = 0.7
Lcoil = 180 H Rcoil = 0.05 VCC = 20 V
VCC = 250 V Vclamp = 250 V Pulse Width = 10 s
INDUCTIVE TEST CIRCUIT
OUTPUT WAVEFORMS IC Rcoil IC(pk) t1 VCE VCE or Vclamp TIME t2 tf
TEST CIRCUITS
t1 Adjusted to Obtain IC t1 (IC(pk) [ LcoilVCC ) (IC(pk) [ Lcoilclamp ) V
RESISTIVE TEST CIRCUIT
TUT 1 INPUT SEE ABOVE FOR DETAILED CONDITIONS 2 1N4937 OR EQUIVALENT Vclamp
tf Clamped t
TUT 1 2 RL VCC
Lcoil VCC
t2
t
Test Equipment Scope -- Tektronix 475 or Equivalent
IC pk 90% VCE(pk) IC tsv trv tc VCE IB 90% IB1 10% VCE(pk)
20 VCE(pk) I B2(pk), BASE CURRENT (AMPS) 90% IC(pk) tfi tti 16 f = 5 IC = 20 A
12
10% IC pk
8
2% IC
4
TIME
0
0
1 2 3 4 5 VBE(off), BASE-EMITTER VOLTAGE (VOLTS)
6
Figure 7. Inductive Switching Measurements
Figure 8. Peak-Reverse Current
4
Motorola Bipolar Power Transistor Device Data
BUS98 BUS98A
SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp trv = Voltage Rise Time, 10 - 90% Vclamp tfi = Current Fall Time, 90 - 10% IC tti = Current Tail, 10 - 2% IC tc = Crossover Time, 10% Vclamp to 10% IC An enlarged portion of the inductive switching waveforms is shown in Figure 7 to aid in the visual identity of these terms. For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN-222: PSWT = 1/2 VCCIC(tc) f In general, trv + tfi tc. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at 25_C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a "SWITCHMODE" transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100_C.
]
INDUCTIVE SWITCHING
4 3 2 t, TIME ( s) 1 0.7 0.5 TC = 100C TC = 25C t, TIME ( s) 0.8 0.6 0.4 0.2 0.1 TC = 25C tc tfi f = 5 4 6 8 10 20 IC, COLLECTOR CURRENT (AMPS) 30 2 4 6 8 10 20 IC, COLLECTOR CURRENT (AMPS) 30
TC = 100C TC = 100C TC = 25C
f = 5 2
Figure 9. Storage Time, tsv
Figure 10. Crossover and Fall Times
3 2 tsv 1 t, TIME ( s) 0.5 0.3 0.2 0.1 0.05 0.03 2 4 6 tc tfi
TC = 25C IC = 20 A VBE(off) = 5 V t, TIME ( s)
3 2 tsv 1 0.5 0.3 0.2 0.1 0.05 tc tfi
TC = 25C IC = 20 A f = 5
8
10
0.03
1
2
3 Ib2/Ib1
4
5
f, FORCED GAIN
Figure 11a. Turn-Off Times versus Forced Gain
Figure 11b. Turn-Off TM Times versus Ib2/Ib1
Motorola Bipolar Power Transistor Device Data
5
BUS98 BUS98A
The Safe Operating Area figures shown in Figures 12 and 13 are specified for these devices under the test conditions shown. 30 20 10 5 2 1 0.5 0.2 0.1 0.05 0.02 2 100 200 500 1000 5 10 20 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) TC = 25C tr = 0.7 s BUS98 BUS98A LIMIT ONLY FOR TURN ON
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
DC
1 ms
Figure 12. Forward Bias Safe Operating Area
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 12 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 12 may be found at any case temperature by using the appropriate curve on Figure 14. TJ(pk) may be calculated from the data in Figure 11. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
IC, COLLECTOR CURRENT (AMPS)
w
REVERSE BIAS
100 IC, COLLECTOR CURRENT (AMPS)
80
60 BUS98 40 VBE(off) = 5 V TC = 100C IC/IB1 5 0 200 400 600 800 1000 BUS98A
20
For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current conditions during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 13 gives RBSOA characteristics.
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 13. Reverse Bias Safe Operating Area
100 POWER DERATING FACTOR (%) SECOND BREAKDOWN DERATING
80
60 THERMAL DERATING
40
20
0
0
40
80
120
160
200
TC, CASE TEMPERATURE (C)
Figure 14. Power Derating
6
Motorola Bipolar Power Transistor Device Data
BUS98 BUS98A
1.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.5 D = 0.5
0.2 0.1 0.05
0.2 0.1 RJC(t) = r(t) RJC RJC = 0.7C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 1.0 10 t, TIME (ms) 100 P(pk)
SINGLE PULSE 0.01 0.1
t2 DUTY CYCLE, D = t1/t2 1000 10000
t1
Figure 15. Thermal Response
OVERLOAD CHARACTERISTICS
200 IC, COLLECTOR CURRENT (AMPS) TC = 25C 160
OLSOA
OLSOA applies when maximum collector current is limited and known. A good example Is a circuit where an inductor is inserted between the transistor and the bus, which limits the rate of rise of collector current to a known value. If the transistor is then turned off within a specified amount of time, the magnitude of collector current is also known. Maximum allowable collector-emitter voltage versus collector current is plotted for several pulse widths. (Pulse width is defined as the time lag between the fault condition and the removal of base drive.) Storage time of the transistor has been factored into the curve. Therefore, with bus voltage and maximum collector current known, Figure 16 defines the maximum time which can be allowed for fault detection and shutdown of base drive. OLSOA is measured in a common-base circuit (Figure 18) which allows precise definition of collector-emitter voltage and collector current. This is the same circuit that is used to measure forward-bias safe operating area.
120 tp = 10 s 80 BUS98A BUS98 40
0
400 450 100 200 300 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
500
Figure 16. Rated Overload Safe Operating Area (OLSOA)
10
8
IC, (AMP)
6 RBE = 5 RBE = 1.1 2
RBE = 50 500 F 500 V Notes: * VCE = VCC + VBE * Adjust pulsed current source for desired IC, tp 8 10 VCC
4
RBE = 0
VEE
0
2
4 6 dV/dt (KV/s)
Figure 17. IC = f (dV/dt)
Figure 18. Overload SOA Test Circuit
Motorola Bipolar Power Transistor Device Data
7
BUS98 BUS98A
PACKAGE DIMENSIONS
A N C -T- E D U V
2 2 PL SEATING PLANE
K
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY.
0.13 (0.005) L G
1
TQ
M
Y
M
-Y-
H
B
-Q- 0.13 (0.005)
M
TY
M
DIM A B C D E G H K L N Q U V
INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188
MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77
STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR
CASE 1-07 TO-204AA (TO-3) ISSUE Z
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298
8
Motorola Bipolar Power Transistor Device Data
*BUS98/D*
BUS98/D

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